DocumentCode
884840
Title
Buffered Direct Injection of Photocurrents into Charge-Coupled Devices
Author
Bluzer, N. ; Stehlik, R.
Volume
13
Issue
1
fYear
1978
fDate
2/1/1978 12:00:00 AM
Firstpage
86
Lastpage
92
Abstract
In this paper we introduce a new and novel method for improving the coupling between photovoltaic IR detectors and CCD signal processors. This new coupling scheme, buffered direct injection (BDI), is a method for improving the direct injection of a signal current into a CCD. The buffered direct injection structure is formed by incorporating a simple amplifier into the conventional direct injection structure. The new structure formed is amenable to LSI technology and offers significant improvements over conventional injection. Improvements in noise, injection efficiency, injection bandwidth and dc offset realized by the BDI approach over conventional coupling structures (e.g., direct injection) are discussed. Experimental evidence is presented to corroborate the analysis.
Keywords
Charge-coupled device circuits; Image sensors; Photovoltaic cells; Charge coupled devices; Couplings; Electrodes; Infrared detectors; Large scale integration; Photoconductivity; Photodetectors; Photovoltaic systems; Signal processing; Solar power generation;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1978.1051000
Filename
1051000
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