• DocumentCode
    886217
  • Title

    Charge storage in vertically integrated GaAs n-channel JFET/junction capacitor device

  • Author

    Hetherington, D.L. ; Kelm, J.F. ; Weaver, H.T.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    28
  • Issue
    20
  • fYear
    1992
  • Firstpage
    1861
  • Lastpage
    1863
  • Abstract
    A GaAs vertical npn structure in which the bottom layer serves as a JFET charge sensing channel has been fabricated and tested as a dynamic memory element. The device can be read nondestructively and exhibits tens of seconds storage times at room temperature. Use of an n channel for sensing charge provides increased sensitivity compared to an earlier p-channel device.
  • Keywords
    III-V semiconductors; capacitors; gallium arsenide; junction gate field effect transistors; semiconductor storage; GaAs; JFET charge sensing channel; charge storage; dynamic memory element; storage times; vertical n-p-n structure; vertically integrated n-channel JFET/junction capacitor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921191
  • Filename
    161217
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886217