DocumentCode
886292
Title
Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves
Author
Young, D.B. ; Babic, D.I. ; DenBaars, S.P. ; Coldren, L.A.
Author_Institution
California Univ., Santa Barbara, CA, USA
Volume
28
Issue
20
fYear
1992
Firstpage
1873
Lastpage
1874
Abstract
Epitaxial AlGaAs/AlAs DBR mirror stacks have been investigated to determine the maximum reflectivity achievable for 550 nm wavelength. A maximum reflectivity of greater than 90% has been achieved despite the optical loss in the AlGaAs, and a 70% peak reflectivity can be achieved with as few as five mirror periods.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; mirrors; molecular beam epitaxial growth; optical losses; reflectivity; semiconductor growth; semiconductor junction lasers; 550 nm; AlGaAs-AlAs; DBR mirror stacks; MBE; distributed Bragg reflectors; epitaxial growth; green lightwaves; maximum reflectivity; optical loss; peak reflectivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19921199
Filename
161225
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