• DocumentCode
    886382
  • Title

    Two Reaction Model of Interface Trap Annealing

  • Author

    Reed, Michael L. ; Plummer, James D.

  • Author_Institution
    Center for Integrated Systems Stanford University Stanford, CA 94305-4070
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1198
  • Lastpage
    1202
  • Abstract
    Interface trap anneal kinetics have been studied using capacitance - voltage measurements and rapid thermal annealing. Power law kinetics have been obtained for aluminum gate devices. Anneal kinetics have been studied as a function of oxide thickness, anneal ambient, radiation damage, substrate orientation, bulk conductivity type, and temperature. A two - reaction model is proposed to explain the observed kinetics.
  • Keywords
    Aluminum; Capacitance; Capacitance-voltage characteristics; Density measurement; Frequency; Kinetic theory; Production; Rapid thermal annealing; Rapid thermal processing; System testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334578
  • Filename
    4334578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886382