• DocumentCode
    886556
  • Title

    Microdosimetry: Measured Probabilities for Energy Deposited by Mesons in One-Micron Sites in Silicon

  • Author

    Dicello, J.F. ; Bradford, J.N. ; Dicello, J.F. ; Dicello, P.T. ; Doss, J.D. ; Johnson, Garth ; McCabe, W. ; McDermott, A. ; Paciotti, M. ; Rivera, O.M. ; Schillaci, M.E.

  • Author_Institution
    Department of Physics, Clarkson University, Potsdam, NY 13676
  • Volume
    33
  • Issue
    6
  • fYear
    1986
  • Firstpage
    1305
  • Lastpage
    1309
  • Abstract
    Probabilities of ionizing events and probability distributions for energy deposited by positive and negative pi mesons and positive mu mesons have been measured in one-micron equivalent sites in silicon. A new low-noise silicon proportional counter was developed to measure complete distributions beginning at a few electron-volts per micrometer. The data show that 140-MeV/c pions when compared with 80-MeV muons are more likely to initiate processes with thresholds greater than about 50 MeV/kg/m2. These results support our earlier hypothesis that, at lower altitudes, pions are more likely to induce errors in memory chips than muons. It is proposed that error rates from pions at lower elevations may be comparable in number to those from neutrons.
  • Keywords
    Aircraft; Computer errors; Cosmic rays; Energy measurement; Error analysis; Mesons; Neutrons; Sea level; Sea measurements; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1986.4334597
  • Filename
    4334597