• DocumentCode
    886680
  • Title

    Elevated electrode integrated circuits

  • Author

    Sakai, Tetsushi ; Yamamoto, Yousuke ; Kobayashi, Yoshiji ; Yamauti, Hironori ; Ishitani, Tsunehachi ; Sudo, Tsuneta

  • Volume
    14
  • Issue
    2
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    301
  • Lastpage
    307
  • Abstract
    The authors developed a new device structure for a bipolar integrated circuit with a propagation delay time of 85 ps/gate and a speed-power product of 0.19 pJ. The remarkable feature of this integrated circuit is its overhanging structure of elevated emitter and collector electrodes, resistors, and interconnections. This article describes the structure, fabrication process, and performance of this integrated circuit.
  • Keywords
    Bipolar integrated circuits; Integrated circuit technology; Integrated logic circuits; bipolar integrated circuits; integrated circuit technology; integrated logic circuits; Bipolar integrated circuits; Electrodes; Electron beams; Electron traps; Integrated circuit technology; MOSFET circuits; Physics; Silicon; Temperature; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051178
  • Filename
    1051178
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=886680