Dose Rate Effects on Total Dose Damage

Total ionizing dose tests have been performed on MOS N-channel and P-channel devices at various dose rates. These tests were made at two test temperatures, 23 °C and 125 °C, and at two widely differing dose rates. The threshold shifts at the various dose rates and temperatures are compared. The total threshold shifts are separated into the contributions from interface states and trapped oxide charge. The results show different damage levels for tests at the different dose rates, and annealing of the threshold shift caused by a combination of oxide trapped charge annealing and interface state buildup.