• DocumentCode
    887144
  • Title

    Charge-injection device with CCD readout

  • Author

    Koch, Rudolf

  • Volume
    14
  • Issue
    3
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    604
  • Lastpage
    608
  • Abstract
    Describes the use of an n-channel two-level polysilicon process for the fabrication of an experimental 16×16 CID imager. The design of the picture elements had to be modified to minimize blooming and signal crosstalk between adjacent sites. The various readout techniques so far devised use two digital shift registers and, in some cases, decoders for addressing the imager. For standard parallel-injection readout the output signal is inversely proportional to the number of rows and columns. A new readout technique is presented in which the signal is transferred from the column lines into a readout CCD. The amplitude of the output signal is independent of the number of picture elements. Both fixed pattern and random noise are reduced.
  • Keywords
    Charge-coupled device circuits; Image sensors; charge-coupled device circuits; image sensors; Charge carriers; Charge coupled devices; Crosstalk; Decoding; Fabrication; MOS capacitors; Shift registers; Signal synthesis; Signal to noise ratio; Space technology;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051223
  • Filename
    1051223