DocumentCode
887144
Title
Charge-injection device with CCD readout
Author
Koch, Rudolf
Volume
14
Issue
3
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
604
Lastpage
608
Abstract
Describes the use of an n-channel two-level polysilicon process for the fabrication of an experimental 16×16 CID imager. The design of the picture elements had to be modified to minimize blooming and signal crosstalk between adjacent sites. The various readout techniques so far devised use two digital shift registers and, in some cases, decoders for addressing the imager. For standard parallel-injection readout the output signal is inversely proportional to the number of rows and columns. A new readout technique is presented in which the signal is transferred from the column lines into a readout CCD. The amplitude of the output signal is independent of the number of picture elements. Both fixed pattern and random noise are reduced.
Keywords
Charge-coupled device circuits; Image sensors; charge-coupled device circuits; image sensors; Charge carriers; Charge coupled devices; Crosstalk; Decoding; Fabrication; MOS capacitors; Shift registers; Signal synthesis; Signal to noise ratio; Space technology;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051223
Filename
1051223
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