• DocumentCode
    887250
  • Title

    A CMOS bandgap voltage reference

  • Author

    Tzanateas, G. ; Salama, C.A.T. ; Tsividis, Y.P.

  • Volume
    14
  • Issue
    3
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    655
  • Lastpage
    657
  • Abstract
    A simple micropower CMOS bandgap voltage reference is described. The reference utilizes MOS devices operating in the weak inversion region in conjunction with a process compatible bipolar device. The voltage reference is insensitive to threshold and mobility variations and is independent of the slope factor which characterizes weak inversion.
  • Keywords
    Field effect integrated circuits; Reference circuits; field effect integrated circuits; reference circuits; Charge coupled devices; Charge transfer; Delay lines; Electron devices; Photonic band gap; Predictive models; Semiconductor device modeling; Solid state circuits; Temperature; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1979.1051234
  • Filename
    1051234
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887250