DocumentCode
887427
Title
Test patterns for EPROMs
Author
Kondo, Ryuji
Volume
14
Issue
4
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
730
Lastpage
734
Abstract
Detectable failure modes are clarified for each writing pattern. The write and erase modes for EPROM are expressed by six matrices. Four matrices express the failure modes in address, decoder and data input/output circuits, one expresses the write pattern and the last expresses bad bits in the memory array. Using this matrix method, it is clarified that the undetectable failure mode number in a 3×3 memory array is zero with a write pattern which is not a checker pattern. In addition, the failure detection rate in all `1´ patterns is calculated to be about 30 percent (MNL=5) in the case of a 1 kbit memory array.
Keywords
Field effect integrated circuits; Integrated circuit testing; Integrated memory circuits; Read-only storage; field effect integrated circuits; integrated circuit testing; integrated memory circuits; read-only storage; Circuit testing; Decoding; EPROM; Electric variables measurement; Large-scale systems; Microcomputers; PROM; Read only memory; Semiconductor memory; Writing;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1979.1051251
Filename
1051251
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