The collector-coupled static RAM cell

The collector-coupled static RAM cell uses a schottky collector transistor switch with merged vertical n-p-n load. The cell is constructed with two dual Schottky collector transistors and one merged dual collector n-p-n transistor. It has been fabricated in an infant oxide isolated bipolar technology and bistability has been demonstrated over four orders of magnitude in cell current (10 nA<I/SUB CELL/<100 μA). The approach taken here of stacking active load and switch elements provides static bit densities comparable to MOS memory and superior to other known bipolar approaches.