• DocumentCode
    887821
  • Title

    Proton-irradiation study of pulled and float-zone silicon solar cells

  • Author

    Tauke, R.V. ; Faraday, B.J.

  • Volume
    55
  • Issue
    2
  • fYear
    1967
  • Firstpage
    234
  • Lastpage
    235
  • Abstract
    A comparison of the photovoltaic properties of pulled and float-zone silicon n-on-p solar cells exposed to 4.6 MeV protons at 30°C showed that differences in the residual oxygen impurity did not play a major role in the radiation-induced damage.
  • Keywords
    Aperture antennas; Crystals; Degradation; Fresnel reflection; Optical films; Phased arrays; Photovoltaic cells; Protons; Semiconductor impurities; Silicon;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5457
  • Filename
    1447387
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=887821