Macromodeling of FET/bipolar operational amplifiers

Author

Krajewska, Grazyna ; Holmes, Frank E.

Volume

14

Issue

6

fYear

1979

fDate

12/1/1979 12:00:00 AM

Firstpage

1083

Lastpage

1087

Abstract

Macromodels for MOSFET-bipolar and JFET-bipolar integrated circuit operational amplifiers are developed. The macromodel parameters are found from typical data sheet or easily measured characteristics. Comparisons of macromodel performance with a device-level computer simulation and with characteristics obtained experimentally for three representative FET/bipolar operational amplifiers (CA 3140, LF 355, and TL 081) are presented. The macromodel is shown to be accurate enough for general purpose applications. The advantages of the macromodel of reduced circuit complexity and reduced central processing unit (CPU) time are demonstrated.

Keywords

Circuit analysis computing; Linear integrated circuits; Monolithic integrated circuits; Operational amplifiers; Semiconductor device models; circuit analysis computing; linear integrated circuits; monolithic integrated circuits; operational amplifiers; semiconductor device models; Central Processing Unit; Circuit analysis computing; Electrical engineering; FETs; Magnetic analysis; Magnetic fields; Operational amplifiers; Radar; Solid state circuits; TV;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.1979.1051319

Filename

1051319