DocumentCode
888532
Title
A comparison of charge collection effects between GaAs MESFETs and III-V HFETs
Author
Hughlock, B. ; Johnston, A. ; Williams, T. ; Harrang, J.
Author_Institution
Boeing Defense & Space Group, Seattle, WA, USA
Volume
39
Issue
6
fYear
1992
fDate
12/1/1992 12:00:00 AM
Firstpage
1642
Lastpage
1646
Abstract
The ion-induced gate edge effect and excess charge collection effect present in GaAs MESFETs are not present in InP and GaAs HFETs. An SEU (single event upset) characterization study shows that these devices can provide an SEU rate which is lower than that of unhardened CMOS
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; ion beam effects; junction gate field effect transistors; radiation hardening (electronics); GaAs; III-V semiconductors; InP; SEU; charge collection effects; ion-induced gate edge effect; radiation hardening; space applications; Gallium arsenide; HEMTs; III-V semiconductor materials; Indium phosphide; Logic circuits; MESFETs; MODFETs; Protons; Space charge; Space technology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.211347
Filename
211347
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