Modeling defect spatial distribution

Author

Meyer, Fred J. ; Pradhan, Dhiraj K.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA, USA

Volume

38

Issue

4

fYear

1989

fDate

4/1/1989 12:00:00 AM

Firstpage

538

Lastpage

546

Abstract

The center-satellite model for describing the distribution of defects on wafers is discussed. This model assigns each defect to a cluster. The distribution of cluster centers on a wafer is one basic component of the model. The other basic component is the distribution of defects (satellites) about the cluster centers. Physical justification for the model is provided. Current yield models are quite accurate for VLSI designs without redundancy. A more flexible model is needed to evaluate the redundancy techniques that will be an integral part of WSI. An example is provided to demonstrate the type of analysis necessary to analyze fault-tolerant designs using the model. Empirical research needed to obtain parameters for the model is commented on, as is the need to reevaluate prior empirical research in which assumptions were made that are relaxed by the center-satellite model

Keywords

VLSI; circuit CAD; fault tolerant computing; WSI; center-satellite model; cluster; defect spatial distribution modelling; fault-tolerant designs; redundancy techniques; wafers; yield models; Data mining; Fabrication; Fault tolerance; Integrated circuit yield; Redundancy; Satellites; Semiconductor device modeling; Testing; Very large scale integration; Virtual manufacturing;

fLanguage

English

Journal_Title

Computers, IEEE Transactions on

Publisher

ieee

ISSN

0018-9340

Type

jour

DOI

10.1109/12.21146

Filename

21146