Oxide-isolated integrated Schottky logic

Integrated Schottky logic has been fabricated in an oxide-isolated technology using 5 μm lines and spaces. The novel device uses a merged substrate p-n-p (base width ≃1.0 μm) to clamp the collector-base junction of the oxide-walled base, down-operated n-p-n transistor. Ion-implanted low-barrier PtSi-nSi Schottky diodes are used for n-p-n collector decoupling. The average propagation delay measured on a 25-stage ring oscillator (fan-in=fan-out=1) was 2.3 ns at 65 μA/stage and 25°C. This 150 fJ/V power-delay product is a 3.6× improvement compared with 540 fJ/V for junction-isolated ISL (2.7 ns at 200 μA/stage).