• DocumentCode
    890422
  • Title

    Electric parameter evolutions against gatelength and bias in ultrashort gate AlGaAs/GaAs HEMTs

  • Author

    Jin-Delorme, Y. ; de Lustrac, Andre ; Crozat, P. ; Yazbek, Khaled ; Adde, R. ; Vernet, G. ; Yin, Yingjie ; Etienne, B. ; Launois, H.

  • Author_Institution
    Univ. Paris Sud, Orsay, France
  • Volume
    29
  • Issue
    7
  • fYear
    1993
  • fDate
    4/1/1993 12:00:00 AM
  • Firstpage
    642
  • Lastpage
    643
  • Abstract
    The electric parameter evolutions of state of the art ultrashort gate planar doped AlGaAs/GaAs HEMTs are studied against gatelength lg=0.4-0.1 mu m and bias. The best value of maximum intrinsic transconductance obtained is gm0max=800 mS/mm at lg=0.15 mu m and the measured cutoff frequency is ft=125 GHz at lg=0.1 mu m.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; solid-state microwave devices; 0.4 to 0.1 micron; 125 GHz; AlGaAs-GaAs; bias; cutoff frequency; electric parameter evolutions; gatelength; maximum intrinsic transconductance; planar doped HEMTs; semiconductors; submicron gate; ultrashort gate HEMTs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930429
  • Filename
    211828
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=890422