Parameter extraction for bipolar transistors

Author

Park, Ju Sung ; Neugroschel, Arnost

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

88

Lastpage

95

Abstract

Novel methods for parameter extraction for bipolar transistors are presented. Emphasis is placed on reliable measurements of small-size transistors, examples are shown for Si integrated circuit transistors with emitters smaller than 10 μm². Advantages over measurements on large-area test devices are discussed. Parameters measured are the current-dependent base and emitter series resistances, emitter contact resistance, base-emitter and base-collector space-charge region capacitances, junction temperature, and base and collector saturation currents. Applications to heterojunction bipolar transistors are demonstrated

Keywords

bipolar transistors; capacitance measurement; electric current measurement; electric resistance measurement; heterojunction bipolar transistors; semiconductor device testing; Si integrated circuit transistors; base emitter space charge region capacitance; base saturation current; base series resistance; base-collector space-charge region capacitances; bipolar transistors; collector saturation currents; emitter contact resistance; emitter series resistances; heterojunction bipolar transistors; junction temperature; parameter extraction; reliable measurements; Bipolar transistors; Capacitance measurement; Circuit testing; Contact resistance; Current measurement; Electrical resistance measurement; Integrated circuit measurements; Integrated circuit reliability; Parameter extraction; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21183

Filename

21183