• DocumentCode
    890707
  • Title

    1.5 V 1 K-CMOS-RAM with only 8 pins

  • Author

    Meusburger, GÜnther

  • Volume
    16
  • Issue
    3
  • fYear
    1981
  • fDate
    6/1/1981 12:00:00 AM
  • Firstpage
    190
  • Lastpage
    194
  • Abstract
    A 256-bit/spl times/4-bit static RAM working on a supply voltage down to 1.2 V is described. A serial interface for the address and the data with a 4-bit bus reduces the pincount of the RAM to only 8. Special design techniques to reach the design goal-very low power at a reasonable circuit speed-are discussed in detail. The device is fabricated in a low power silicon gate CMOS process. An operating power of 500 /spl mu/W/MHz and a standby power of less than 1 /spl mu/W at 1.5 V supply voltage was achieved. With this serial interface a cycle time of 1 /spl mu/s at 1.5 V was measured.
  • Keywords
    Field effect integrated circuits; Integrated memory circuits; Random-access storage; field effect integrated circuits; integrated memory circuits; random-access storage; Circuits; Filtering; Large scale integration; Microelectronics; Microprocessors; Microwave propagation; Pins; Signal processing; Telecommunications;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1981.1051572
  • Filename
    1051572