Effects of titanium salicide process on MOSFET characteristics

Author

Chang, Shuo-Tung ; Chiu, Kuang Yi

Author_Institution

Hewlett-Packard Lab., Palo Alto, CA, USA

Volume

36

Issue

1

fYear

1989

fDate

1/1/1989 12:00:00 AM

Firstpage

145

Lastpage

147

Abstract

The effects of the titanium-salicide (self-aligned silicide) process with different postmetallization anneals on the performance of very thin gate oxide MOSFETs are discussed. Compared to the conventional polycrystalline-silicon (poly-Si) gate process, a titanium-salicide process without enough annealing in hydrogen-containing ambients degrades MOSFET characteristics. However, after hydrogen anneal (but not a nitrogen anneal), the electrical characteristics of the salicided MOSFETs become comparable to those of poly-Si gate MOSFETs. The device degradation has been correlated with interface-state generation through an interface-state density study

Keywords

annealing; insulated gate field effect transistors; interface electron states; metallisation; semiconductor device testing; titanium compounds; MOSFET characteristics; Si-SiO₂; TiSi₂-Si; device degradation; electrical characteristics; interface-state density; postmetallization anneals; salicide process; thin gate oxide MOSFETs; Annealing; Capacitance-voltage characteristics; Degradation; Electric variables; Hydrogen; MOSFET circuits; Nitrogen; Silicides; Threshold voltage; Titanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.21196

Filename

21196