Photon-induced total-internal-reflection all-optical switches

Author

Xiao Qing Jiang ; Jian Yi Yang ; Heng Zheng Zhan ; Ke Jian Chen ; Yi Tang ; Xi Hua Li ; Ming Hua Wang

Author_Institution

Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China

Volume

16

Issue

2

fYear

2004

Firstpage

443

Lastpage

445

Abstract

An all-optical switch is demonstrated. The switch is based on the photon-induced carrier effect and the principle of the total internal reflection (TIR). An asymmetric Y-branch with multimode waveguides is designed and fabricated on GaAlAs/GaAs epitaxial materials. The 805-nm light is used to activate the carrier effects and generate the total-reflection effect at the branch. The device is characterized at the wavelength of 1.31 μm. Its extinction ratio is larger than 18.0 dB when the injected optical density is 15×10¹ W/mm².

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; integrated optics; light reflection; optical communication equipment; optical design techniques; optical fabrication; optical planar waveguides; optical switches; semiconductor epitaxial layers; 1.31 mum; 805 nm; GaAlAs-GaAs; GaAlAs/GaAs epitaxial materials; all-optical switches; integrated optics; multimode waveguides; optical design; optical fabrication; photon-induced carrier effect; photon-induced total-internal-reflection; total internal reflection; Charge carrier processes; Gallium arsenide; Integrated optics; Optical materials; Optical reflection; Optical refraction; Optical resonators; Optical switches; Optical waveguides; Refractive index;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2003.821053

Filename

1266451