DocumentCode
891064
Title
Patterning of dispenser cathode surfaces to a controlled porosity
Author
Garner, Charles E. ; Deininger, William D. ; Gibson, John ; Thomas, Richard
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
36
Issue
1
fYear
1989
fDate
1/1/1989 12:00:00 AM
Firstpage
158
Lastpage
168
Abstract
A process to pattern slots approximately 1.25-μm in width into 25-μm-thick tungsten films that have been deposited onto flat or concave surfaces is discussed. These techniques are summarized as follows: a 25-μm-thick tungsten film with a high degree of (100) orientation is chemically vapor deposited (CVD) onto a flat or concave molybdenum mandrel. A 5-μm-thick aluminium film is deposited onto the CVD tungsten, followed by 2 μm of photoresist. On concave cathodes, xenon dichlorine laser ablation or X-ray lithography is used to pattern the photoresist, whereas on flat cathodes deep ultraviolet lithography can be used. The patterned photoresist serves as the mask in a chlorine ion beam assisted etching (IBAE) process to pattern the aluminum. An alternative process is to deposit aluminum oxide films onto the tungsten and pattern the aluminum oxide using laser ablation. The tungsten film is then patterned to 3-6 μm slot widths using IBAE+ClF3 with the patterned aluminum or oxide as the mask. Finally, a sputter deposition step is required to close up to slots to approximately 1 μm. The process described is capable of patterning concave disperser cathodes to a controlled and precise porosity
Keywords
chemical vapour deposition; lithography; sputter etching; thermionic cathodes; tungsten; 1.25 micron; 25 micron; 5 micron; Al mask; Al-W-Mo; Al2O3 mask; CVD; IBAE; X-ray lithography; XeCl2 laser radiation; concave cathodes; controlled porosity; deep ultraviolet lithography; dispenser cathode surfaces; flat cathodes; ion beam assisted etching; laser ablation; patterned photoresist; photoresist film; process to pattern slots; sputter deposition; Aluminum oxide; Cathodes; Chemical lasers; Chemical vapor deposition; Laser ablation; Resists; Tungsten; X-ray lasers; X-ray lithography; Xenon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.21200
Filename
21200
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