• DocumentCode
    891578
  • Title

    Power absorption capability of punch-through devices

  • Author

    King, Jan H. ; Philips, John

  • Author_Institution
    Westinghouse Electric Corporation, Youngwood, Pa.
  • Volume
    55
  • Issue
    8
  • fYear
    1967
  • Firstpage
    1361
  • Lastpage
    1365
  • Abstract
    The power absorption capability and high-current characteristics of silicon high-voltage punch-through structures were investigated. Impact ionization was observed in the devices using 100- and 75-ohmċcm base material. The transient power absorption capability of these structures was found to be less temperature-dependent than that of avalanche devices. With proper surface contouring, a power absorption capability of 48 kW/cm2at 10 µs was achieved at a junction temperature of 26°C and 38 kW at 200°C for devices made of 350-ohmċcm base material.
  • Keywords
    Absorption; Aluminum alloys; Breakdown voltage; Circuits; Conductivity; Protection; Rectifiers; Resistance heating; Silicon; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1967.5836
  • Filename
    1447766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=891578