Effects of total-dose irradiation on gate-all-around (GAA) devices

Author

Colinge, Jean-Pierre ; Terao, Akira

Author_Institution

Univ. Catholique de Louvain, Belgium

Volume

40

Issue

2

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

78

Lastpage

82

Abstract

The response of gate-all-around (GAA) MOS transistors to dose irradiation is quite different from that observed on other types of silicon-on-insulator (SOI) MOSFETs. In regular SOI MOSFETs, edge leakage increases substantially faster than the main transistor leakage upon creation of oxide charges due to the irradiation. The GAA MOSFET behaves in the opposite way; the shift of edge threshold voltage upon creation of charges in the oxide is smaller than that of the main transistor. As a result, a kink develops in the subthreshold characteristics of regular SOI MOSFETs upon irradiation, while the original subthreshold kink of GAA devices disappears when the device is irradiated

Keywords

gamma-ray effects; metal-insulator-semiconductor devices; MOSFET; edge threshold voltage; gamma irradiation; gate all round devices; total-dose irradiation; Boron; Hafnium; Isolation technology; MOSFETs; Oxidation; Radiation hardening; Semiconductor films; Silicon on insulator technology; Substrates; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.212320

Filename

212320