A Wide Band Injection Locked Frequency Divider With Variable Inductor Load

Author

Chuang, Yun-Hsueh ; Jang, Sheng-Lyang ; Lee, Shao-Hwa

Author_Institution

Dept. of Electron. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei

Volume

17

Issue

6

fYear

2007

fDate

6/1/2007 12:00:00 AM

Firstpage

460

Lastpage

462

Abstract

This letter proposes a new wide band CMOS injection locked frequency divider (ILFD). The circuit is made of a two-stage differential CMOS ring oscillator and is based on MOS switches directly coupled to the differential outputs of the ring oscillator. A tuning circuit composed of inductors in series with a metal oxide semiconductor field effect transistor is used to extend the locking range. The divide-by-two ILFD can provide wide locking range and the measured results show that at the supply voltage of 1.8 V, the free-running frequency of the ILFD is operating from 0.92 to 3.6 GHz while the Vtune is tuned from 0 to 1.8 V. At the incident power of 0 dBm, this ILFD has a wide locking range from 1.15 to 7.4 GHz

Keywords

CMOS integrated circuits; MOSFET; circuit tuning; frequency dividers; inductors; injection locked oscillators; microwave frequency convertors; 0 to 1.8 V; 0.92 to 3.6 GHz; 1.15 to 7.4 GHz; 1.8 V; MOS switches; divide-by-two ILFD; locking range; metal oxide semiconductor field effect transistor; tuning circuit; two-stage differential CMOS ring oscillator; variable inductor load; wide band injection locked frequency divider; Circuit optimization; Coupling circuits; FETs; Frequency conversion; Inductors; Power measurement; Ring oscillators; Switches; Switching circuits; Wideband; CMOS; direct injection-locked frequency divider (ILFD); ring oscillator; transformer;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.897848

Filename

4220693