Effect of conduction-band discontinuity on lasing characteristics of 1.5 mu m InGaAs/In(Ga)AlAs MQW-FP lasers

Author

Wakatsuki, A. ; Kawamura, Y. ; Noguchi, Y. ; Iwamura, H.

Author_Institution

NTT Opto-Electron. Lab., Kanagawa, Japan

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

383

Lastpage

386

Abstract

The characteristic temperature (T/sub 0/), relaxation frequency (f/sub r/), differential gain (dg/dn) and nonlinear gain coefficient ( epsilon ) of 1.5- mu m InGaAs/In(Ga)AlAs multiple-quantum-well (MQW) Fabry-Perot (FP) lasers grown by gas source molecular beam epitaxy (GSMBE) are reported. It is found that T/sub 0/ is little affected by the difference in the conduction band discontinuity. A maximum T/sub 0/ value of 86 K is obtained. The dg/dn and epsilon in were calculated from the slope of the f/sub r/ versus square root power plot and the damping K-factor. It is demonstrated that dg/dn and epsilon of InGaAs/In(Ga)AlAs MQW lasers increase with an increase in the conduction band discontinuity.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor lasers; 1.5 micron; 86 K; Fabry-Perot; IR; InGaAs-InAlAs; InGaAs-InGaAlAs; InGaAs-InGaAs; MBE; MQW-FP lasers; characteristic temperature; conduction-band discontinuity; damping K-factor; differential gain; gas source molecular beam epitaxy; lasing characteristics; multiple-quantum-well; nonlinear gain coefficient; relaxation frequency; semiconductors; Damping; Distributed feedback devices; Fiber lasers; Gallium arsenide; Gas lasers; Indium compounds; Indium gallium arsenide; Indium phosphide; Quantum well devices; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212672

Filename

212672