Enhanced electroabsorption in disordered AlGaAs/GaAs quantum wells

Author

Li, E. Herbert ; Weiss, Bernard L.

Author_Institution

Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK

Volume

5

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

445

Lastpage

448

Abstract

The electric field induced change of absorption coefficient at room temperature is calculated for disordered Al/sub 0.3/Ga/sub 0.7/As/GaAs single-quantum-well (QW) structures at wavelengths around the QW bandedge. Results show that the change of absorption coefficient increases with applied field for both TE and TM polarized light for all cases of disordering considered, and the maximum change of absorption coefficient increases with the extent of disordering. These changes show that the interaction length of an electroabsorption modulator can be reduced by up to 30% if disordered QWs are used.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; optical modulation; semiconductor quantum wells; Al/sub 0.3/Ga/sub 0.7/As-GaAs; QW bandedge; TE polarized light; TM polarized light; absorption coefficient; disordered AlGaAs-GaAs SQW; electric field induced change; electroabsorption modulator; interaction length; room temperature; Absorption; Charge carrier processes; Excitons; Gallium arsenide; Integrated optics; Optical devices; Optical polarization; Stark effect; Tellurium; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.212694

Filename

212694