• DocumentCode
    894886
  • Title

    A Cache Architecture for Extremely Unreliable Nanotechnologies

  • Author

    Roelke, George R. ; Baldwin, Rusty O. ; Mullins, Barry E. ; Kim, Yong C.

  • Author_Institution
    Air Force Res. Lab., Wright-Patterson AFB, OH
  • Volume
    56
  • Issue
    2
  • fYear
    2007
  • fDate
    6/1/2007 12:00:00 AM
  • Firstpage
    182
  • Lastpage
    197
  • Abstract
    In the drive to create ever smaller transistors, conventional silicon CMOS devices are becoming more difficult to fabricate reliably as process size shrinks. New technologies are being investigated to replace silicon CMOS. While offering greater numbers of devices per unit area, all of these technologies are more difficult to fabricate, and more likely to fail in operation than current technologies. Nanotechnology research has identified the need for fault and defect tolerance at the architectural level so that future devices can be used in large-scale electronics circuits. This paper examines the problem of creating reliable caches using extremely unreliable technologies. We incorporate support logic (i.e., control, datapath, and self-test logic) into the analysis, and propose a novel Content Addressable Memory-based design incorporating "best practice" fault tolerant design techniques. The design requires 15 times the number of devices of a conventional design, but enables the use of device technologies with defect rates higher than 10-6, a three order of magnitude improvement over non-fault tolerant designs
  • Keywords
    cache storage; content-addressable storage; fault tolerant computing; memory architecture; nanoelectronics; cache architecture; content addressable memory-based design; defect tolerance; fault tolerance; large-scale electronics circuits; nanotechnologies; silicon CMOS; support logic analysis; CMOS process; CMOS technology; Circuit faults; Fault diagnosis; Large-scale systems; Logic design; Logic devices; Nanoscale devices; Silicon; Transistors; Computer architecture; defect tolerance; error correcting codes; fault tolerance; memory; nanotechnology;
  • fLanguage
    English
  • Journal_Title
    Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9529
  • Type

    jour

  • DOI
    10.1109/TR.2007.895309
  • Filename
    4220797