Evaluation of RF Capacitance Extraction for Ultrathin Ultraleaky SOI MOS Devices

Author

Yu, Chuanzhao ; Zhang, J. ; Yuan, J.S. ; Duan, F. ; Jayanarananan, S.K. ; Marathe, A. ; Cooper, S. ; Pham, V. ; Goo, J.-S.

Author_Institution

Dept. of Electron. & Commun. Eng., Central Florida Univ., Orlando, FL

Volume

28

Issue

1

fYear

2007

Firstpage

45

Lastpage

47

Abstract

This letter evaluates a radio-frequency (RF) method to extract the gate capacitance for SOI MOSFETs with ultrathin ultraleaky gate dielectrics. Conventional methods such as two-element and three-element methods using precision impedance analyzer were also compared. The RF method scans the RF capacitance data, assesses its lower and upper limits, and extracts the SOI gate capacitance accurately independent of gate oxide thickness

Keywords

MIS devices; MOSFET; capacitance measurement; silicon-on-insulator; RF capacitance extraction; capacitance measurement; inversion oxide thickness; leakage current; precision impedance analyzer; ultrathin ultraleaky SOI MOS devices; Capacitance measurement; Contact resistance; Data mining; Dielectric substrates; Frequency measurement; Impedance; Leakage current; MOS devices; MOSFETs; Radio frequency; $S$-parameter; Capacitance measurement; inversion oxide thickness; leakage current; radio frequency (RF);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.886413

Filename

4039573