Modeling of Tunnelling Currents in Hf-Based Gate Stacks as a Function of Temperature and Extraction of Material Parameters

Author

Campera, Andrea ; Iannaccone, Giuseppe ; Crupi, Felice

Author_Institution

Pisa Univ.

Volume

54

Issue

1

fYear

2007

Firstpage

83

Lastpage

89

Abstract

In this paper, we show that through electrical characterization and detailed quantum simulations of the capacitance-voltage and current-voltage (I-V) characteristics, it is possible to extract a series of material parameters of alternative gate dielectrics. We have focused on HfO₂ and HfSi_XO_YN_Z gate stacks and have extracted information on the nature of localized states in the dielectric responsible for a trap-assisted tunneling (TAT) current component and for the temperature behavior of the I-V characteristics. Simulations are based on a one-dimensional Poisson-Schroumldinger solver capable to provide the pure tunneling current and TAT component. Energy and capture cross section of traps responsible for TAT current have been extracted

Keywords

Poisson equation; Schrodinger equation; dielectric materials; hafnium; hafnium compounds; silicon compounds; tunnelling; 1D Poisson-Schrodinger solver; Hf; Hf-based gate stacks; HfO₂; HfO₂ gate stacks; HfSi_XO_YN_Z gate stacks; HfSiON; I-V characteristics; capacitance-voltage characteristics; current-voltage characteristics; electrical characterization; gate dielectrics; material parameter extraction; quantum simulations; trap-assisted tunneling; tunnelling currents; CMOS technology; Capacitance; Data mining; Dielectric materials; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Photonic band gap; Temperature; Tunneling; Gate leakage; high-$k$ dielectrics; trap cross section; trap-assisted tunneling (TAT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.887202

Filename

4039686