DocumentCode
897354
Title
Gigahertz transresistance amplifiers in fine line NMOS
Author
Abidi, Asad A.
Volume
19
Issue
6
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
986
Lastpage
994
Abstract
Two front-end amplifiers for fiber optics applications at gigabit data rates were fabricated in fine-line NMOS. One was designed for operation at 1 Gb/s and a simpler circuit was designed for 1.7 Gb/s, with the function of amplifying a photocurrent into an output voltage. An automatic gain control (AGC) optionally follows the first amplifier. The bandwidth of the first amplifier was measured to be 920 MHz, with optical operation at 800 Mb/s at an optical sensitivity of -28 dB using a pin detector for light at 1.3 μm wavelength. The bandwidth of the second amplifier 32 dB at a bandwidth of 870 MHz. Both circuits operated at less than their designed frequency because of discrepancies between expected and measured transconductances.
Keywords
Automatic gain control; Field effect integrated circuits; Optical communication equipment; Preamplifiers; automatic gain control; field effect integrated circuits; optical communication equipment; preamplifiers; Bandwidth; Circuits; MOS devices; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Optical sensors; Photoconductivity; Semiconductor optical amplifiers; Wavelength measurement;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1984.1052255
Filename
1052255
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