• DocumentCode
    897354
  • Title

    Gigahertz transresistance amplifiers in fine line NMOS

  • Author

    Abidi, Asad A.

  • Volume
    19
  • Issue
    6
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    986
  • Lastpage
    994
  • Abstract
    Two front-end amplifiers for fiber optics applications at gigabit data rates were fabricated in fine-line NMOS. One was designed for operation at 1 Gb/s and a simpler circuit was designed for 1.7 Gb/s, with the function of amplifying a photocurrent into an output voltage. An automatic gain control (AGC) optionally follows the first amplifier. The bandwidth of the first amplifier was measured to be 920 MHz, with optical operation at 800 Mb/s at an optical sensitivity of -28 dB using a pin detector for light at 1.3 μm wavelength. The bandwidth of the second amplifier 32 dB at a bandwidth of 870 MHz. Both circuits operated at less than their designed frequency because of discrepancies between expected and measured transconductances.
  • Keywords
    Automatic gain control; Field effect integrated circuits; Optical communication equipment; Preamplifiers; automatic gain control; field effect integrated circuits; optical communication equipment; preamplifiers; Bandwidth; Circuits; MOS devices; Optical amplifiers; Optical fiber amplifiers; Optical fibers; Optical sensors; Photoconductivity; Semiconductor optical amplifiers; Wavelength measurement;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1984.1052255
  • Filename
    1052255