• DocumentCode
    897392
  • Title

    Magnetic and microwave resonance characterization of ion beam sputtered amorphous FexNi80-xB15Si5 films

  • Author

    Oliver, S.A. ; Harris, V. ; Ryu, J. ; Vittoria, C.

  • Author_Institution
    Center for Electromagn. Res., Northeastern Univ., Boston, MA, USA
  • Volume
    25
  • Issue
    5
  • fYear
    1989
  • fDate
    9/1/1989 12:00:00 AM
  • Firstpage
    3355
  • Lastpage
    3357
  • Abstract
    A series of amorphous FexNi80-xB15Si5 thin films have been deposited by ion beam sputtering. Beam parameters used during deposition were chosen to be those which produced the highest quality Fe 40Ni40B15Si5 film, as determined by the film magnetic properties. The films were characterized by reflection-electron-diffraction, resistivity, vibrating-sample-magnetometer, ferromagnetic-resonance (FMR), and frequency-swept zero-field-resonance measurements. The samples are found to be magnetically active, with no biasing external field, under 1 GHz. The small FMR linewidths, high resistivity, and large saturation magnetization show that these alloys may be applicable in thin-film microwave devices
  • Keywords
    boron alloys; electron diffraction examination of materials; ferromagnetic properties of substances; ferromagnetic resonance; iron alloys; magnetic properties of amorphous substances; magnetic thin films; magnetisation; nickel alloys; silicon alloys; sputtered coatings; FMR linewidths; FexNi80-xB15Si5 amorphous films; ferromagnetic-resonance; frequency-swept zero-field-resonance; ion beam sputtering; microwave resonance characterization; reflection-electron-diffraction; resistivity; saturation magnetization; thin-film microwave devices; vibrating-sample-magnetometer; Amorphous magnetic materials; Conductivity; Ion beams; Iron; Magnetic films; Magnetic resonance; Optical films; Saturation magnetization; Semiconductor films; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.42299
  • Filename
    42299