High-responsivity intersubband infrared photodetector using InGaAsP/InP superlattice

Author

Pham, L. ; Jiang, X.S. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, CA, USA

Volume

14

Issue

2

fYear

1993

Firstpage

74

Lastpage

76

Abstract

A 4-7- mu m infrared detector made of an InGaAsP/InP short-period superlattice is demonstrated with materials grown by metalorganic chemical vapor deposition (MOCVD). A single current blocking layer of InP is used to reduce the dark current. At 40 K, the detector shows a low dark current of less than 4 pA at a bias voltage of 4 V. At 35 K, a peak responsivity of 4.0 A/W is obtained at 5.6 mu m at a bias of 1 V.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor growth; semiconductor superlattices; vapour phase epitaxial growth; 35 K; 4 to 7 micron; 40 K; III-V semiconductor; InGaAsP-InP superlattice; MOCVD; high-responsivity; intersubband infrared photodetector; short-period superlattice; single current blocking layer; Dark current; Etching; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Infrared detectors; MOCVD; Metallic superlattices; Photodetectors; Quantum well devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215113

Filename

215113