• DocumentCode
    898288
  • Title

    Hydrogen Concentration and Distribution in High-Purity Germanium Crystals

  • Author

    Hansen, W.L. ; Haller, E.E. ; Luke, P.N.

  • Author_Institution
    Lawrence Berkeley Laboratory University of California Berkeley, California 94720 U. S. A.
  • Volume
    29
  • Issue
    1
  • fYear
    1982
  • Firstpage
    738
  • Lastpage
    744
  • Abstract
    High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2×1015cm-3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium ß-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H2 with a dissociation energy > 3eV. This is lowered to 1.8eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1×107cm-3 and are estimated to contain 108H atoms each.
  • Keywords
    Crystals; Detectors; Etching; Gases; Germanium; Hydrogen; Impurities; Nitrogen; Radio frequency; Thermal conductivity;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1982.4335948
  • Filename
    4335948