DocumentCode
898420
Title
Protective device for MOS integrated circuits
Author
Iyer, R.R.
Volume
56
Issue
7
fYear
1968
fDate
7/1/1968 12:00:00 AM
Firstpage
1223
Lastpage
1224
Abstract
Two protective devices for MOS integrated circuits have been extensively tested and proved feasible. They also perform more reliably than conventional Zener diodes. One of them has been used in the fabrication of a dual 25-bit MOS and MNOS integrated shift register and performed reliably.
Keywords
Detectors; Dielectric substrates; Leakage current; MOS integrated circuits; Noise generators; Noise measurement; Power measurement; Power system modeling; Protection; Temperature;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/PROC.1968.6529
Filename
1448459
Link To Document