GaAs planar-doped barrier vacuum microelectronic electron emitters

Author

Jiang, W.N. ; Holcombe, D.J. ; Hashemi, Majid M. ; Mishra, Umesh K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

14

Issue

3

fYear

1993

fDate

3/1/1993 12:00:00 AM

Firstpage

143

Lastpage

145

Abstract

A novel vacuum microelectronic electron emitter has been demonstrated in GaAs by using a planar-doped-barrier (PDB) structure. Emitted electrons are collected in high vacuum by a tantalum anode placed approximately 1 mm away from the emitter surface. Surface passivation with (NH/sub 4/)/sub 2/S/sub x/ followed by in situ heating in vacuum has been used to obtain an atomically clean surface. An emission current density of 0.42 A-cm/sup -2/ and an efficiency of 0.3% have been obtained from a 60 mu m*60 mu m emission region with an anode bias of 100 V.<>

Keywords

III-V semiconductors; electron field emission; gallium arsenide; passivation; semiconductor doping; vacuum microelectronics; (NH/sub 4/)/sub 2/S/sub x/; 0.3 percent; 100 V; GaAs; Ta anode; anode bias; high vacuum; planar-doped barrier; semiconductors; vacuum microelectronic electron emitters; Anodes; Current density; Doping; Electron emission; Electron guns; Gallium arsenide; Kinetic energy; Microelectronics; Silicon; Surface cleaning;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215138

Filename

215138