A high-voltage optoelectronic GaAs static induction transistor

Author

Hadizad, P. ; Hur, J.H. ; Zhao, H. ; Kaviani, K. ; Gundersen, Martin A. ; Fetterman, Harold R.

Author_Institution

Univ. of Southern California, Los Angeles, CA, USA

Volume

14

Issue

4

fYear

1993

fDate

4/1/1993 12:00:00 AM

Firstpage

190

Lastpage

192

Abstract

Experimental realization of an optically activated, high-voltage GaAs static induction transistor (SIT) is reported. In the forward blocking state, the breakdown voltage of the device was approximately 200 V, while in the conduction state, on-state current densities exceeding 150 A/cm/sup 2/ were obtained. In the floating-gate configurations (gate open), the specific on-resistance of the device was approximately 50 m Omega -cm/sup 2/. Optical modulation of the device was achieved using a compact semiconductor laser array as the triggering source. In this mode, a gate-coupled RC network was implemented, resulting in an average switching energy gain (load energy/optical energy) of approximately 30. This mode of operation is applicable to series-coupled devices for pulsed switching at higher power levels.<>

Keywords

III-V semiconductors; field effect transistors; gallium arsenide; phototransistors; power transistors; semiconductor switches; GaAs; HV optoelectronics SIT; breakdown voltage; compact semiconductor laser array; conduction state; floating-gate configurations; forward blocking state; gate-coupled RC network; on-state current densities; optical modulation; pulsed switching; specific on-resistance; static induction transistor; switching energy gain; Current density; Gallium arsenide; Laser modes; MOSFETs; Optical arrays; Optical modulation; Optical pulses; Power semiconductor switches; Semiconductor laser arrays; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.215154

Filename

215154