• DocumentCode
    898609
  • Title

    Series-connected bulk GaAs amplifiers and oscillators

  • Author

    Thim, H.W.

  • Volume
    56
  • Issue
    7
  • fYear
    1968
  • fDate
    7/1/1968 12:00:00 AM
  • Firstpage
    1245
  • Lastpage
    1245
  • Abstract
    A composite negative-mobility bulk semiconductor diode (n-GaAs), consisting of several active and passive regions in series, has been tested. The doping times sample length product of each active region of this diode is smaller than a critical value (1012cm-2for n-GaAs) in order to prevent high field domain formation within the device. The diode has no power-impedance limitation and is not subject to filamentary breakdown. RF pulse powers of 9.6 watts at 2.5 GHz and 28 watts at 1.3 GHz have been obtained from these devices consisting of three and four wafers in series.
  • Keywords
    Conductivity; Doping; Electric breakdown; Gallium arsenide; Gunn devices; Radio frequency; Semiconductor diodes; Testing; Voltage; Voltage-controlled oscillators;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1968.6548
  • Filename
    1448478
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=898609