• DocumentCode
    900590
  • Title

    Radiation Damage in Semiconductor Detectors

  • Author

    Kraner, H.W.

  • Author_Institution
    Brookhaven National Laboratory Upton, New York 11973
  • Volume
    29
  • Issue
    3
  • fYear
    1982
  • fDate
    6/1/1982 12:00:00 AM
  • Firstpage
    1087
  • Lastpage
    1100
  • Abstract
    A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.
  • Keywords
    Electrons; Germanium; Leak detection; Leakage current; Neutrons; Protons; Radiation detectors; Semiconductor radiation detectors; Silicon; Spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1982.4336328
  • Filename
    4336328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=900590