DocumentCode
901225
Title
Modeling of InGaAs MSM photodetector for circuit-level simulation
Author
Xiang, Andrew ; Wohlmuth, Walter ; Fay, Patrick ; Kang, Sung-Mo ; Adesida, Ilesanmi
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
14
Issue
5
fYear
1996
fDate
5/1/1996 12:00:00 AM
Firstpage
716
Lastpage
723
Abstract
An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes
Keywords
III-V semiconductors; S-parameters; SPICE; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; transient analysis; In0.53Ga0.47As; In0.53Ga0.47As metal-semiconductor-metal photodetectors; InGaAs MSM photodetector; S-parameter measurements; SPICE; ac analysis; accurate model; circuit-level simulation; convolution integrals; dark characteristics; dc current characteristics; impulse response functions; large-signal response; physical meaning; small-signal analysis; transient analysis; transit-time limitation; Circuit simulation; Dark current; Indium gallium arsenide; Optical receivers; Photodetectors; Schottky barriers; Substrates; Thermionic emission; Transient analysis; Voltage;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.495150
Filename
495150
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