• DocumentCode
    901225
  • Title

    Modeling of InGaAs MSM photodetector for circuit-level simulation

  • Author

    Xiang, Andrew ; Wohlmuth, Walter ; Fay, Patrick ; Kang, Sung-Mo ; Adesida, Ilesanmi

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    14
  • Issue
    5
  • fYear
    1996
  • fDate
    5/1/1996 12:00:00 AM
  • Firstpage
    716
  • Lastpage
    723
  • Abstract
    An accurate model for In0.53Ga0.47As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal response of MSM photodetectors, impulse response functions and convolution integrals are implemented into SPICE. The transit-time limitation is also incorporated into the small-signal analysis. Most circuit parameters preserve the physical meaning. S-parameter measurements are used to find the circuit parameters critical to transient and ac analyses. Results are compared with experimentally obtained data, and excellent agreement is obtained consistently on InGaAs photodetectors of different sizes
  • Keywords
    III-V semiconductors; S-parameters; SPICE; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; optical receivers; photodetectors; semiconductor device models; transient analysis; In0.53Ga0.47As; In0.53Ga0.47As metal-semiconductor-metal photodetectors; InGaAs MSM photodetector; S-parameter measurements; SPICE; ac analysis; accurate model; circuit-level simulation; convolution integrals; dark characteristics; dc current characteristics; impulse response functions; large-signal response; physical meaning; small-signal analysis; transient analysis; transit-time limitation; Circuit simulation; Dark current; Indium gallium arsenide; Optical receivers; Photodetectors; Schottky barriers; Substrates; Thermionic emission; Transient analysis; Voltage;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.495150
  • Filename
    495150