Dose Enhancement Effects in Semiconductor Devices

This paper presents engineering factors for estimating the effects of dose enhancement on semiconductor devices. Included are a variety of photon spectra, device structures and radiation responses mechanisms. These data can be used to predict transient and permanent effects caused by various radiation environments and to interpret measurements obtained at simulation sources (Flash X rays, LINACs and isotope sources). Guidance for the correlation of experimental data to system environment response is also included in the paper by the use of specific examples.