• DocumentCode
    902310
  • Title

    A graphical model for two-region saturation in bipolar transistors and its implementation in the modeling program SPICE

  • Author

    Smithies, S.A. ; Poole, K.F.

  • Volume
    22
  • Issue
    2
  • fYear
    1987
  • fDate
    4/1/1987 12:00:00 AM
  • Firstpage
    301
  • Lastpage
    303
  • Abstract
    Two-region saturation at high injection levels and at low frequencies may be conveniently approximated using a graphical model which introduces the concept of quasi-saturation resistance R/SUB QS/. It is shown how this graphical model may be implemented in the modeling program SPICE with the aid of a distributed equivalent circuit.
  • Keywords
    Bipolar integrated circuits; Bipolar transistors; Circuit analysis computing; Equivalent circuits; Semiconductor device models; bipolar integrated circuits; bipolar transistors; circuit analysis computing; equivalent circuits; semiconductor device models; Bipolar transistors; Degradation; Electrons; Graphical models; Impact ionization; MOSFET circuits; Optical saturation; Photodetectors; SPICE; Voltage;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1987.1052719
  • Filename
    1052719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902310