• DocumentCode
    902699
  • Title

    A SiC backward diode

  • Author

    Farrell, Ronan

  • Volume
    57
  • Issue
    2
  • fYear
    1969
  • Firstpage
    221
  • Lastpage
    222
  • Abstract
    SiC backward diodes which operate between 77°K and 1000°K have been developed. Figures of merit (γ√R) of 19 300, 3960, and 15 at 12.5 MHz, 50 MHz and 8.8 GHz, respectively, have been measured with detector area on the order of 10-5cm2. These results are compatible with a prior analysis which predicted an upper frequency limit of between 0.1 and 1.0 GHz for SiC backward diodes.
  • Keywords
    Computer simulation; Diodes; Equivalent circuits; Frequency; Impedance; Low pass filters; Power harmonic filters; RLC circuits; Silicon carbide; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1969.6926
  • Filename
    1448856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902699