• DocumentCode
    902900
  • Title

    Explicit Cinfinity -continuous and general model for nMOSFETs

  • Author

    Iniguez, B. ; Moreno, Eugenio G.

  • Author_Institution
    Univ. de Illes Balears, Palma de Mallorca, Spain
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    5/27/1993 12:00:00 AM
  • Firstpage
    1036
  • Lastpage
    1037
  • Abstract
    An explicit and single-piece model for nMOSFETs is presented. The drain current and total charges for Cinfinity -continuous under all regions of normal operation. Good agreement has been found with HSPICE simulations. The model also improves the smoothness at the transitions between different regions, and hence the convergence.
  • Keywords
    insulated gate field effect transistors; semiconductor device models; C infinity -continuous; HSPICE simulations; NMOS transistor; convergence; drain current; n-channel devices; nMOSFETs; single-piece model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930693
  • Filename
    216395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=902900