• DocumentCode
    903233
  • Title

    Electronic switching in phase-change memories

  • Author

    Pirovano, Agostino ; Lacaita, Andrea L. ; Benvenuti, Augusto ; Pellizzer, Fabio ; Bez, Roberto

  • Author_Institution
    Central Res. & Dev., STMicroelectronics, Agrate Brianza, Italy
  • Volume
    51
  • Issue
    3
  • fYear
    2004
  • fDate
    3/1/2004 12:00:00 AM
  • Firstpage
    452
  • Lastpage
    459
  • Abstract
    A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.
  • Keywords
    current distribution; memory cards; semiconductor materials; semiconductor switches; Ge2Sb2Te5; amorphous chalcogenide; bandgap model; crystalline chalcogenide; current-voltage curve; electronic switching; microscopic structure; phase-change memories; resistor; Amorphous materials; Crystallization; Current measurement; Microscopy; Numerical simulation; Phase change memory; Photonic band gap; Resistors; Tellurium; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2003.823243
  • Filename
    1268273
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=903233