Analysis and characterization of the segmented anode LIGBT

Author

Sin, Johnny K O ; Mukherjee, Satyen

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Clear Water Bay, Hong Kong

Volume

40

Issue

7

fYear

1993

fDate

7/1/1993 12:00:00 AM

Firstpage

1300

Lastpage

1306

Abstract

A LIGBT (lateral insulated gate bipolar transistor) structure, called the segmented-anode LIGBT, is presented and analyzed. The anode structure responsible for the injection of minority carriers for conductivity modulation is implemented using segments of p⁺ and n⁺ diffusion along the device width. This minimizes the forward bias of the p⁺ injector during device turn-off, resulting in higher switching speed compared to the shorted-anode LIGBT. Since the n⁺ region required for electron extraction is implemented along the device width and consumes only a small amount of area, a reduction in device size is also achieved. The switching speed and reduced device size result in better tradeoff between on-resistance and turn-off time compared with other LIGBTs. Two-dimensional numerical simulations are carried out to demonstrate the operation and characteristics of the structure, and the experimental inductive and resistive switching characteristics of the structure are discussed

Keywords

insulated gate bipolar transistors; minority carriers; semiconductor switches; anode structure; conductivity modulation; device turn-off; electron extraction; forward bias; inductive switching characteristics; lateral insulated gate bipolar transistor; minority carriers; on-resistance; resistive switching characteristics; segmented anode LIGBT; switching speed; Anodes; Circuits; Conductivity; Electrons; FETs; Frequency; Insulated gate bipolar transistors; Insulation; Plasma devices; Silicon compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.216436

Filename

216436