• DocumentCode
    904121
  • Title

    Linear model for high-frequency transistors for different bias

  • Author

    Kumar, K. Bharath ; Pandharipande, V.M.

  • Volume
    22
  • Issue
    6
  • fYear
    1987
  • fDate
    12/1/1987 12:00:00 AM
  • Firstpage
    1212
  • Lastpage
    1215
  • Abstract
    A linear model for three high-frequency transistors is presented. The model shows good agreement between measured and simulated Y-parameters at different collector currents for all the three transistors.
  • Keywords
    Semiconductor device models; Transistors; semiconductor device models; transistors; Capacitance; Circuit simulation; Computational modeling; Computer simulation; Electrons; Frequency; Low-frequency noise; Mathematical model; Radar; Semiconductor device noise;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1987.1052879
  • Filename
    1052879
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=904121