DocumentCode
904203
Title
Transient selection gates using breakdown
Author
Mar, Jerry
Volume
7
Issue
5
fYear
1972
fDate
10/1/1972 12:00:00 AM
Firstpage
326
Lastpage
329
Abstract
A new class of gates suitable for selection in memories is presented. The gate utilizes charge storage and avalanche breakdown to obtain a low power dissipation (~6×10/SUP -12/ J/selection, or ~60 μW/gate in a 10-MHz-repetition selection rate), more than an order of magnitude below that of conventional TTL gates. Only narrow (≳ 1 ns), nonoverlapping pulses are needed and external dc voltages are not required. A totally transient mode of operation is described that requires no resistors. Also described are the results of analog simulations using discrete components.
Keywords
Electric breakdown; Logic circuits; Semiconductor storage devices; Simulation; Transients; electric breakdown; logic circuits; semiconductor storage devices; simulation; transients; Avalanche breakdown; Capacitance; Circuits; Electric breakdown; P-n junctions; Power dissipation; Proposals; Resistors; Switches; Voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1972.1052887
Filename
1052887
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