Electrically reprogrammable nonvolatile semiconductor memory

Electrically reprogrammable nonvolatile memories using avalanche injection of electrons and holes into a floating gate are described. The fabrication data and the results of measurement on fabricated devices are shown. Analyses of the operation of the memory cell are done using conventional MOS transistors. The injection of current into silicon dioxide, its ratio to avalanche current, the WRITE speed, the basic data for analog memory, and the drift of the characteristics are measured and discussed.