Small signal nonquasistatic models for GaAs field effect transistors for implementation in SPICE. I. Modulation-doped field effect transistors (MODFETs)

Author

Lin, H.-K. ; Abdel-Motaleb, I.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

138

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

735

Lastpage

748

Abstract

A general small signal nonquasistatic model for modulation doped field effect transistors (MODFETs) is presented. The model is valid for devices operating in both linear and saturation regions. The two dimensional electron gas (2DEG) current is modelled. The current flowing in the parasitic doped AlGaAs layer is considered elsewhere. In both cases, admittance parameters (Y-parameters) are derived and used to build SPICE-like equivalent circuits. The proposed model can, therefore, be easily implemented in SPICE for microwave and high-frequency analogue circuit analysis. The results show that, for a 1 μm gate length MODFET, the error is less than 5% at 86 GHz

Keywords

III-V semiconductors; aluminium compounds; circuit analysis computing; equivalent circuits; gallium arsenide; high electron mobility transistors; semiconductor device models; solid-state microwave devices; 2DEG current; GaAs-AlGaAs; MODFET; SPICE; Y-parameters; admittance parameters; analogue circuit analysis; equivalent circuits; field effect transistors; high-frequency; linear region; microwave FET; modulation doped; saturation regions; small signal nonquasistatic model; two dimensional electron gas;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings G

Publisher

iet

ISSN

0956-3768

Type

jour

Filename

105370